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| TPCP8202 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV) TPCP8202 Portable Equipment Applications Motor Drive Applications DC-DC Converters * * * * * Lead(Pb)-Free 2.40.1 0.475 1 4 Unit: mm 0.330.05 0.05 M A 8 5 Low drain-source ON-resistance: RDS(ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 20 S (typ.) Low leakage current: IDSS = 10 A (max)(VDS = 30 V) Enhancement model: Vth = 0.7 to 1.4V (VDS = 10 V, ID = 200 A) 0.65 2.90.1 B 0.05 M B A 0.80.05 S Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 30 30 12 5.5 22 1.48 1.23 W 0.58 0.36 7.86 5.5 0.12 150 -55 to 150 mJ A mJ C C Unit V V V A 0.025 S 0.170.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 1.12 +0.13 -0.12 1. Source1 2. Gate1 3. Source2 4. Gate2 5. Drain2 6. Dain2 7. Drain1 8. Drain1 0.28 +0.1 -0.11 JEDEC JEITA TOSHIBA 2-3V1G Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range (Note 4) Single-device operation (Note 3a) Weight: 0.017 g (typ.) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 6, see the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2 3 Marking (Note 6) 8 7 6 5 8202 1 2 3 4 Lot No. This transistor is an electrostatic-sensitive device. Handle with care. 1 2008-03-21 2.80.1 4 TPCP8202 Thermal Characteristics Characteristic Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 84.5 C/W 101.6 215.5 C/W 347.2 Unit Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) 25.4 (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) 25.4 (a) (b) Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is applied to one device only.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is applied to both devices evenly.). Note 4: VDD = 24 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = 5.5 A Note 5: Repetitive rating: Pulse width limited by maximum channel temperature. Note 6: on the lower left of the marking indicates Pin 1. * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2008-03-21 TPCP8202 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON-resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge1 Gate-drain ("Miller") charge tf toff Qg Qgs1 Qgd VDD 24 V, VGS = 5 V, ID = 5.5 A |Yfs| Ciss Crss Coss tr ton VGS 5V 0V 4.7 ID = 2.8 A RL = 5.36 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 10 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -12 V VDS = 10 V, ID = 200 A VGS = 2.5 V, ID = 2.8 A VGS = 4.0 V, ID = 2.8A VGS = 4.5 V, ID = 2.8A VDS = 10 V, ID = 2.8A Min 30 15 0.7 10 Typ. 29 20 19 20 2150 155 165 10 20 19 90 28 4 8 Max 10 10 1.4 39 24 23 ns nC pF S m Unit A A V V VDD 15 V Duty 1%, tw = 10 s Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 5.5 A, VGS = 0 V Min Typ. Max 22 -1.2 Unit A V 3 2008-03-21 TPCP8202 5 4.0 2.0 2.1 ID - VDS Common source Ta = 25C Single Pulse test 10 4.0 2.2 2.3 2.5 ID - VDS Common source Ta = 25C Single Pulse test 2.1 2.0 (A) 2.3 3 1.9 ID ID Drain current (A) 4 2.2 8 6 1.9 4 1.8 2 Drain current 2 1.8 1 1.7 VGS = 1.6 V 0 0.4 0.8 1.2 1.6 2 1.7 VGS = 1.6 V 0 0 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 10 VDS - VGS 2.0 VDS (V) ID (A) 8 Common source VDS = 10 V Single Pulse test 1.6 Common source Ta = 25C Single Pulse test Drain-source voltage 6 1.2 Drain current 4 100C 2 25C Ta = -55C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.8 0.4 1.4 2.8 5.5 ID= 11A 0.0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 Common source VDS = 10 V Single Pulse test 100 Common source Ta = 25C Single Pulse test RDS (ON) - ID |Yfs| (S) Drain-source ON-resistance RDS (ON) (m) VGS = 2.5 V 4.0 4.5 10 Forward transfer admittance 10 Ta = -55C 25C 100C 1 0.1 0.1 1 10 100 1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2008-03-21 TPCP8202 RDS (ON) - Ta 50 IDR - VDS 10 Drain-source ON-resistance RDS (ON) (m) 5.5 A 40 VGS = 2.5 V ID = 1.4 A 4.5 V ID = 1.4,2.8,5.5 A 10 2.8 A 4.0 V 30 IDR (A) Common source Single Pulse test 4 2 Drain reverse current 1 1 VGS = 0 V 20 0 -80 -40 0 40 80 120 160 0.1 Common source Ta = 25C Single Pulse test 0 - 0.2 - 0.4 - 0.6 - 0.8 -1 Ambient temperature Ta (C) Drain-source voltage VDS (V) C - VDS 10000 1.6 Vth - Ta Vth (V) Gate threshold voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -80 (pF) Ciss 1000 Capacitance C Coss Crss 100 10 0.1 Common source VGS = 0 V f = 1 MHz Ta = 25C 1 10 100 Common source VDS = 10 V ID = 0.2 mA Pulse test -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) 2.0 PD - Ta Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) Dynamic input/output characteristics 35 VDS (V) PD 25 VDS 20 15 10 6V 12V VGS 5 4 Drain power dissipation Drain-source voltage (2) 1.0 t=5s VDD = 24V 3 2 (3) 0.5 (4) 5 0 1 0 36 0 0 40 80 120 160 200 0 4 8 12 16 20 24 28 32 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2008-03-21 Gate-source voltage VGS 1.5 (1) Common source ID = 5.5 A 30 Ta = 25C Pulse test 7 6 (W) (V) TPCP8202 rth - tw 1000 Single pulse (4) (3) (2) (1) rth Transient thermal impedance (C/W) 100 10 Device mounted on a glass-epoxy board (a) (1) Single-device operation (2) Single-device value at dual operation Device mounted on a glass-epoxy board (b) (3) Single-device operation (4) Single-device value at dual operation (Note 2a) (Note 3a) (Note 3b) (Note 2b) (Note 3a) (Note 3b) 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 100 (A) ID max (pulse)* 1 ms* ID Drain current 10 10 ms* 1 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 10 100 VDSS max Drain-source voltage VDS (V) 6 2008-03-21 TPCP8202 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2008-03-21 |
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